Technical Session 27: Diodes, Silicon Carbide, and GaN Drivers

Title	Author(s)	Paper #
An Active Suppression Circuit for the Reduction of di/dt Event Supply Voltage Variation	M. Budnik J. Wood N. Spagnuolo K. Roy	27.1
A Novel ESD Super-Clamp Structure For TVS Applications	M.Bobde S. Mallikarjunaswamy M. Ho F. Hebert	27.2
Integrated Circuit Implementation for a GaN HFETs Driver Circuit	B. Wang M. Riva J. Bakos A. Monti	27.3
A NOVEL MONOLITHIC SELF-SYNCHRONIZED RECTIFIER	H. Jia X. Cheng X. Wang P. Kumar Z. Shen	27.4
Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module	T. Duong A. Rivera-López J. Ortiz-Rodríguez A. Hefner, Jr.	27.5
New Low Reverse Recovery Charge (Qrr) High-Voltage Silicon Rectifiers Provide Improved Efficiency over Presently Available Ultrafast Diodes	J. Jovalusky	27.6

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