Conference at a Glance Technical Sessions Technical Session 33: Gan and SiC Devices & Applications
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Technical Session: GaN and SiC Devices & Applications
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Title |
Author(s) |
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Application Study of the Benefits for Using Silicon-Carbide Versus Silicon in Power Modules |
Robert Wood, Thomas Salem |
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GaN HFET Switching Characteristics at 350V/20A and Synchronous Boost Converter Performance at 1MHz |
Brian Hughes, James Lazar, Stephen Hulsey, Daniel Zehnder, Daniel M... |
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Comparative Analysis of Commercially Available Silicon Carbide Transistors |
Andrew Lemmon, Michael Mazzola, James Gafford, Kevin Speer |
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1200 V SiC "Super" Junction Transistors Operating at 250 °C with Extremely Low Energy Losses for Power Conversion Applications |
Ranbir Singh, Siddarth Sundaresan, Eric Lieser, Michael Digangi |
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On Understanding and Using SiC Power JFETs to Design a 100 W Active Clamp Forward Converter |
Supratim Basu, Tore Undeland |
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Multi-Chip SiC DMOSFET Half-Bridge Power Module for High Temperature Operation |
Tsuyoshi Funaki, Masashi Sasagawa, Takashi Nakamura |
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Optical Control of 1200V, 20A SiC MOSFET |
Sudip Mazumder, Adam Meyer |
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